? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data data sheet 780, rev. - hermetic power mosfet n-channel features: ? 1000 volt, 3.0 ohm, 3a mosfet ? electrically isolated, hermetically sealed ? electrically equivalent to mtc3n100e maximum ratings all ratings are at t a = 25 c unless otherwise specified. rating symbol min. typ. max. units gate to source voltage v gs - - 20 volts continuous drain current v gs =10v, t c = 25 c v gs =10v, t c = 100 c i d - - 3.0 2.4 amps pulsed drain current @ t c = 25 c i dm - - 9.0 amps operating and storage temperature t op /t stg -55 - +150 c termal resistance junction to case r jc - - 0.89 c/w total device dissipation @ t c = 25 c p d - - 140 watts electrical characteristics characteristic symbol min. typ. max. units drain to source breakdown voltage v gs = 0v, i d = 250 a bv dss 1000 - - volts drain to source on state resistance v gs = 10v, i d = 1.5a r ds(on) - 3.0 4.0 gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 2.0 - 4.0 volts forward transconductance v ds = 15v, i d = 1.5a g fs 2.0 3.56 - s(1/ ) zero gate voltage drain current v ds = max. rating, v gs = 0v v ds = max. rating v gs = 0v, t j = 125 c i dss - - 10 100 a gate to source leakage forward v gs = -20v gate to source leakage reverse v gs = 20v i gss - - -100 100 na total gate charge v gs = 10v gate to source charge v ds = max. ratingx0.5 gate to drain charge i d = 3.0a q g q gs q gd - 32.5 6.0 14.6 - nc turn on delay time v dd = 400v, rise time i d = 3.0a, turn off delay time r g = 9.1 fall time v gs = 10v t d(on) t r t d(off) t f - 13 19 42 33 25 40 90 55 nsec diode forward voltage t j = 25 c, i s = 3.0a, v gs = 0v t j = 125 c v sd - - 1.1 volts diode reverse recovery time t j = 25 c, reverse recovery charge i s = 3.0a, dis/dt = -100a/ sec t rr q rr - 615 2.92 - nsec c input capacitance v gs = 0 v, output capacitance v ds = 25 v, reverse transfer capac itance f = 1.0mhz c iss c oss c rss - 1316 117 26 1800 260 75 pf SHD218414 SHD218414a SHD218414b
? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron data sheet 780 revision - mechanical dimensions: in inches / mm .370.010 (9.40.254) 2 3 .610.010 (15.5 .254) .030.010 (.762.254) .110 (2.80) max alumina ring terminal 1 2 3 .370.010 (9.40.254) .610.010 (15.5.254) .125.010 (3.17.254) .110 (2.79) max alumina ring .510.020 (12.9.508) .320.010 (8.13.254) .030.010 (.762.254) moly lid moly base terminal 1 .060.010 ( 1.52.254 ) .020.002 (.508.051) .020.005 r (.508.127 ) 2 3 .370.010 (9.40.254) .610.010 (15.5.254) .090.010 (2.29.254) .130 (3.30) max alumina ring .520.020 (13.2.508) .320.010 (8.13 .254) .030.010 (.762.254) moly lid moly base terminal 1 .060.010 ( 1.52.254 ) .015.002 (.381.051) .020.005 r (.508.127 ) copper terminals pinout table device type pin 1 pin 2 pin 3 mosfet shd-5/a/b package drain source gate SHD218414 SHD218414a SHD218414b shd-5 shd-5a shd-5b disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety s hould be ensured by using semi conductor devices that featur e assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconductor be liable for any dam ages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconductor be liable for any fa ilure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s ) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or par t, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be ap plied to that purpose by their direct purchasers or any thir d party. when exporting these products (technolog ies), the necessary procedures are to be taken in accordance with related laws and regulatio ns.
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